Most Cited Patents
3,541 citations – Sensor and image pickup device.
Date of Patent: Nov. 18, 2008
Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura.
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
3,539 citations – High-electron mobility transistor with zinc oxide.
Date of Patent: Sep. 12, 2006
Inventors: Jeff Nause, Shanthi Ganesan.
A zinc oxide (ZnO) FET uses a gate-insulating layer (aluminum nitride/aluminum gallium nitride or magnesium zinc oxide) to achieve high input amplitude. It operates in enhancement mode, like a silicon MOSFET, forming an inversion layer. The excellent insulation characteristics of the gate insulating layer increase the Schottky barrier, enabling the large input amplitude.
March 21, 2023, Weekly Utility Patent Insights
IDiyas Honors The Most Prolific Inventors In Charlotte, North Carolina. At Its First In-Person Event.
Top 51 Inventions Globally
About The Author
Angelina Kushnarova
Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.