Most Cited Patents
3,566 citations – LnCuO(S, Se, Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.
Date of Patent: Jan. 29, 2008
Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Masahiro Orita, Hidenori Hiramatsu, Kazushige Ueda.
The disclosed method involves producing a high-quality LnCuOX single-crystal thin film. It includes growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on top to form a laminated film, and annealing the laminated film at a temperature of 500°C or higher. This method enables the growth of a thin film with excellent crystallinity suitable for use in light-emitting diodes, semiconductor lasers, field-effect transistors, and hetero-bipolar transistors, surpassing the limitations of conventional polycrystalline films.
3,563 citations – Indium oxide-based thin film transistors and circuits.
Date of Patent: May. 01, 2007
Inventors: Yi-Chi Shih, Cindy Xing Qiu, Ishiang Shih, Chunong Qiu
This invention relates to thin film transistors and circuits with indium oxide-based channel layers. These components can be fabricated at low temperatures on various substrates, including flexible and transparent ones. They offer high charge carrier mobilities, making them suitable for electronic display and imaging applications. The invention also provides methods for fabricating these thin film transistors with indium oxide-based channels.
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About The Author
Angelina Kushnarova
Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.