Most Cited Patents
3,538 citations – Thin film transistor having an etching protection film and manufacturing method thereof.
Date of Patent: Jun. 10, 2008
Inventors: Hiromitsu Ishii, Hitoshi Hokari, Motohiko Yoshida, Ikuhiro Yamaguchi.
The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.
3,526 citations – Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
Date of Patent: Mar. 10, 2009
Inventors: Yoshihiro Ito, Michio Kadota
The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.
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About The Author
Angelina Kushnarova
Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.