Technical Director, 5G/6G at Ofinno Technologies.
Wireless systems engineer with in-depth research experience in the physical layer (PHY) and medium-access-control (MAC) layer.
Proven research record with over 50 publications in IEEE journals and conferences
Patent №: 12193054 – – Contention resolution window size based on uplink carrier switching. A wireless device switches uplink carriers on an unlicensed cell, determines a minimum contention window for LBT based on priority, and transmits a transport block on the new carrier.
Patent №: 12192978 – Beam management and beam indication in radio systems. A wireless device receives PUCCH configuration parameters with a timing gap threshold and downlink and uplink TCI messages. It transmits uplink control information on the PUCCH using a spatial filter based on the downlink or uplink TCI, depending on the timing gap comparison.
Patent №: 12192128 – Radio link monitoring in a multi-transmission and reception point scenario. A wireless device receives configuration parameters indicating coreset groups, each with one or more coresets. It selects a coreset group for radio link monitoring based on these parameters and measures a reference signal indicated by the TCI state of a coreset in the group.
Deputy Chief Executive at A*STAR, Professor at NUS.
Patent №: 12191393 – Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction. A nano-FET includes an epitaxial source/drain region with a first semiconductor layer contacting separate ends of two nanostructures. A second layer, with higher dopants and less silicon, is formed over the first layer.
Patent №: 12191378 – Fin field effect transistor device structure. A fin field-effect transistor (FinFET) device includes a fin structure over a substrate, surrounded by a liner and isolation structure. A gate dielectric and gate structure are formed over the fin and isolation.
Patent №: 12191369 – Source and drain engineering process for multigate devices. Multi-gate device fabrication involves forming a semiconductor stack with alternating layers, patterning it into a fin alongside a dielectric fin, and creating a gate stack. A recess is etched in the fin’s source/drain region, where a source/drain feature is grown, leaving an airgap with the dielectric fin.
Patent №: 12191304 – Method of manufacturing a semiconductor device and a semiconductor device. A FinFET is formed by creating and recessing sacrificial layers to expose the source/drain. After adding a dielectric layer, the sacrificial layers are removed to form a contact opening, which is filled with a conductive layer.
Patent №: 12191212 – Semiconductor method and device. A method includes forming a fin on a substrate, depositing a liner over its top and sides with thickness based on the fin’s germanium concentration, creating an STI region adjacent to the fin, removing the liner above the STI, and forming a gate stack on the fin, in contact with the liner.
Patent №: 12191174 – Semiconductor processing tool and method of using an embedded chamber. An embodiment includes a pattern transfer processing chamber with an external loading area for wafer transfer. The loading area has a loadport, a load-lock connecting to the processing chamber, and an embedded baking chamber to heat a wafer’s patterned photoresist.
Supervisor – Group Leader at Ford Motor Company.
Patent №: 12187218 – Seat-mounted overhead airbag.
A vehicle seat includes a seatback and an airbag inflatable from an uninflated to an inflated position. A linear actuator fixed to the seatback moves the airbag upward from an undeployed to a deployed position, supporting it in both uninflated and inflated states.
Patent №: 12187210 – Bumper-mounted inflatable device. A vehicle bumper assembly includes a bumper with first and second inflatable devices spaced apart and deployable downward from undeployed to deployed positions. An uninflatable panel below the bumper connects the two inflatable devices in their deployed positions.
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