The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Aug. 29, 2023
Applicant:

Artto Aurola, Espoo, FI;

Inventor:

Artto Aurola, Espoo, FI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/11 (2006.01); H01L 27/14 (2006.01); H01L 27/146 (2006.01); H01L 31/113 (2006.01); H10F 30/282 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 30/282 (2025.01); H10F 39/8033 (2025.01); H10F 39/80377 (2025.01);
Abstract

A semiconductor radiation detector device includes a semiconductor substrate. On one surface of the substrate are a MIG layer () of semiconductor of second conductivity type, a barrier layer () of semiconductor of first conductivity type, and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create a source and a drain of a pixel-specific transistor. The device further includes a first conductivity type first contact, so that the pixel voltage is a potential difference between one of the pixel dopings and the first conductivity type first contact. The location of a main gate () corresponds at least partly to the location of a channel between the source and the drain. The device includes at least one extra gate () horizontally displaced from the main gate ().


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