The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Aug. 25, 2022
Radiation-tolerant unit mosfet hardened against single event effect and total ionization dose effect
Applicant:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Inventors:
Hee Chul Lee, Daejeon, KR;
Young Tak Roh, Daejeon, KR;
Assignee:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/552 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 89/60 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/102 (2025.01); H01L 23/552 (2013.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 62/151 (2025.01); H10D 89/813 (2025.01); H10D 30/0241 (2025.01);
Abstract
Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.
Quick Actions:
Lee, Hee. (2025). Radiation-tolerant unit mosfet hardened against single event effect and total ionization dose effect (U.S. Patent No. RE50525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/RE50525
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