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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US RE50485 B1

PDFFull Text
Date of Patent:
Jul. 08, 2025

Filed:

Mar. 25, 2022

Semiconductor module with external power sensor

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Juergen Hoegerl, Regensburg, DE;

Leo Aichriedler, Puch, AT;

Christian Schweikert, Munich, DE;

Gerald Wriessnegger, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Minh Nguyen

Int. Cl.
CPC ...
H01L 23/31 (2006.01); G01R 15/20 (2006.01); G01R 33/00 (2006.01); G01R 33/07 (2006.01); G01R 33/09 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/051 (2006.01); H01L 23/057 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/44 (2006.01); H01L 23/473 (2006.01); H01L 23/50 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H01L 25/16 (2023.01); H10N 50/10 (2023.01); H10N 52/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); G01R 15/207 (2013.01); G01R 33/072 (2013.01); G01R 33/091 (2013.01); H01L 21/4817 (2013.01); H01L 21/4871 (2013.01); H01L 21/565 (2013.01); H01L 22/34 (2013.01); H01L 23/057 (2013.01); H01L 23/3675 (2013.01); H01L 23/3735 (2013.01); H01L 23/44 (2013.01); H01L 23/473 (2013.01); H01L 23/50 (2013.01); H01L 25/072 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H10N 50/10 (2023.02); H10N 52/00 (2023.02); G01R 33/0005 (2013.01); G01R 33/0017 (2013.01); H01L 23/051 (2013.01);
Abstract

A semiconductor module includes a semiconductor die, a mold compound encasing the semiconductor die, a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or an opening near the constricted region of the first terminal, and a coreless magnetic field sensor disposed in the recess or the opening of the mold compound and isolated from the first terminal by the mold compound. The coreless magnetic sensor is configured to generate a signal in response to a magnetic field produced by current flowing in the constricted region of the first terminal. The magnitude of the signal is proportional to the amount of current flowing in the constricted region of the first terminal. A method of manufacturing the module also is described.

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