The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 28, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Daimotsu Kato, Kawasaki, JP;
Toshiya Yonehara, Yamato, JP;
Hiroshi Ono, Setagaya, JP;
Yosuke Kajiwara, Yokohama, JP;
Masahiko Kuraguchi, Yokohama, JP;
Tatsuo Shimizu, Shinagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.