The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Sep. 09, 2021
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Kenji Hayashi, Chino, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01); H01L 23/34 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H03B 5/02 (2006.01); H03B 5/36 (2006.01); H03K 19/007 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H01L 23/34 (2013.01); H01L 23/5283 (2013.01); H01L 29/4238 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H03B 5/02 (2013.01); H03B 5/364 (2013.01); H03K 19/0075 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H03B 2200/0034 (2013.01);
Abstract
A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other.