The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2023

Filed:

Sep. 03, 2020
Applicant:

Slt Technologies, Inc, Los Angeles, CA (US);

Inventors:

Mark P. D'Evelyn, Vancouver, WA (US);

Michael Ragan Krames, Palo Alto, CA (US);

Assignee:

SLT Technologies, Inc, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2005.12); H01L 33/00 (2009.12); C30B 23/02 (2005.12); C30B 29/40 (2005.12); H01L 21/02 (2005.12); H01L 21/78 (2005.12); H01L 29/04 (2005.12); H01L 29/20 (2005.12); H01L 29/36 (2005.12); H01L 31/00 (2005.12); H01L 31/0304 (2005.12); H01L 31/18 (2005.12); H01L 33/32 (2009.12); H01S 5/30 (2005.12);
U.S. Cl.
CPC ...
C30B 25/18 (2012.12); C30B 23/025 (2012.12); C30B 29/406 (2012.12); H01L 21/0254 (2012.12); H01L 21/7813 (2012.12); H01L 29/04 (2012.12); H01L 29/045 (2012.12); H01L 29/2003 (2012.12); H01L 29/36 (2012.12); H01L 31/00 (2012.12); H01L 31/03044 (2012.12); H01L 31/1856 (2012.12); H01L 31/1892 (2012.12); H01L 33/0075 (2012.12); H01L 33/0093 (2020.04); H01L 33/32 (2012.12); H01S 5/3013 (2012.12); Y02E 10/544 (2012.12);
Abstract

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.


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