The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2022
Filed:
Apr. 06, 2020
Applicant:
Kioxia Corporation, Minato-ku, JP;
Inventors:
Kosuke Yanagidaira, Fujisawa, JP;
Kazuhide Yoneya, Sagamihara, JP;
Assignee:
Kioxia Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2005.12); H01L 29/78 (2005.12); H01L 29/06 (2005.12); H01L 27/02 (2005.12); H01L 21/8238 (2005.12);
U.S. Cl.
CPC ...
H01L 27/0924 (2012.12); H01L 27/0207 (2012.12); H01L 27/092 (2012.12); H01L 29/0653 (2012.12); H01L 29/0692 (2012.12); H01L 29/7846 (2012.12); H01L 29/7848 (2012.12); H01L 21/823807 (2012.12); H01L 21/823878 (2012.12);
Abstract
According to one embodiment, a semiconductor device includes a first element isolating area, a first element area surrounding the first element isolating area, a second element isolating area surrounding the first element area a first gate electrode provided on and across the first element isolating area, the first element area, and the second element isolating area, and a second gate electrode isolated from the first gate electrode and provided on and across the first element isolating area, the first element area, and the second element isolating area.