The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2019
Filed:
Aug. 25, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Masakazu Yamaguchi, Kanagawa, JP;
Wataru Saito, Kanagawa, JP;
Ichiro Omura, Kanagawa, JP;
Masaru Izumisawa, Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2005.12); H01L 29/78 (2005.12); H01L 29/06 (2005.12); H01L 29/66 (2005.12); H01L 29/40 (2005.12); H01L 29/417 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7811 (2012.12); H01L 29/0634 (2012.12); H01L 29/0696 (2012.12); H01L 29/402 (2012.12); H01L 29/66712 (2012.12); H01L 29/7802 (2012.12); H01L 29/0653 (2012.12); H01L 29/41741 (2012.12);
Abstract
A semiconductor device includes a first-conductivity-type semiconductor layer which includes a cell region portion and a junction terminating region portion. The junction terminating region portion is a region portion which is positioned in an outer periphery of the cell region portion to maintain a breakdown voltage by extending a depletion layer to attenuate an electric field.
Yamaguchi, Masakazu. (2019). Semiconductor device with super junction region (U.S. Patent No. RE47641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/RE47641
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile