The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2019
Filed:
Jan. 26, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Nam Kyun Park, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2005.12); H01L 45/00 (2005.12); H01L 27/22 (2005.12);
U.S. Cl.
CPC ...
H01L 45/1206 (2012.12); H01L 27/226 (2012.12); H01L 27/2454 (2012.12); H01L 27/2481 (2012.12); H01L 45/04 (2012.12); H01L 45/06 (2012.12); H01L 45/1233 (2012.12); H01L 45/147 (2012.12);
Abstract
A variable resistance memory device includes a plurality of column selection switches, a plurality of variable resistance memory cells configured to be stacked and selected by the plurality of column selection switches, and a bit line connected to the plurality of variable resistance memory cells. Each of the plurality of variable resistance memory cells includes an ovonic threshold switch (OTS) element selectively driven by a plurality of word lines arranged to be stacked and a variable resistor connected in parallel to the OTS element.