The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2018

Filed:

Mar. 23, 2017
Applicant:

Slt Technologies, Inc., Los Angeles, CA (US);

Inventors:

Mark P. D'Evelyn, Santa Barbara, CA (US);

Derrick S. Kamber, Goleta, CA (US);

Assignee:

SLT Technologies, Inc., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/00 (2005.12); C01B 21/06 (2005.12); C30B 9/00 (2005.12); C30B 28/06 (2005.12); C30B 29/40 (2005.12); C30B 7/10 (2005.12);
U.S. Cl.
CPC ...
C01B 21/0632 (2012.12); C30B 7/10 (2012.12); C30B 9/00 (2012.12); C30B 28/06 (2012.12); C30B 29/403 (2012.12);
Abstract

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.


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