The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2018
Filed:
Jul. 21, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
ChiWeon Yoon, Seoul, KR;
Donghyuk Chae, Seoul, KR;
Sang-Wan Nam, Hwaseong-si, KR;
Sung-Won Yun, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2005.12); G11C 16/04 (2005.12); G11C 16/10 (2005.12); G11C 16/34 (2005.12); H01L 29/792 (2005.12); H01L 27/11582 (2016.12); H01L 29/788 (2005.12); H01L 27/11556 (2016.12);
U.S. Cl.
CPC ...
G11C 16/10 (2012.12); G11C 16/0483 (2012.12); G11C 16/3418 (2012.12); H01L 27/11556 (2012.12); H01L 27/11582 (2012.12); H01L 29/7889 (2012.12); H01L 29/7926 (2012.12);
Abstract
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.