The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2017

Filed:

Jun. 11, 2015
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, Suwon-si, KR;

Inventors:

Sunil Shim, Seoul, KR;

Sunghoi Hur, Seoul, KR;

Kihyun Kim, Hwaseong-si, KR;

Hansoo Kim, Suwon-si, KR;

Jaehun Jeong, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2005.12); G11C 16/10 (2005.12); G11C 11/56 (2005.12); G11C 16/34 (2005.12); G11C 16/04 (2005.12);
U.S. Cl.
CPC ...
G11C 16/10 (2012.12); G11C 11/5628 (2012.12); G11C 16/0483 (2012.12); G11C 16/3427 (2012.12);
Abstract

In a method of multiple-bit programming of a three-dimensional memory device having arrays of memory cells that extend in horizontal and vertical directions relative to a substrate, the method comprises first programming a memory cell to be programmed to one among a first set of states. At least one neighboring memory cell that neighbors the memory cell to be programmed to one among the first set of states is then first programmed. Following the first programming of the at least one neighboring memory cell, second programming the memory cell to be programmed to one among a second set of states, wherein the second set of states has a number of states that is greater than the number of states in the first set of states.


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