The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2017
Filed:
Apr. 14, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Juwan Lim, Seoul, KR;
Sungkweon Baek, Suwon-si, KR;
Kwangmin Park, Seoul, KR;
Seungjae Baik, Anseong-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Abstract
A nonvolatile memory device and a method of forming the nonvolatile memory device, the method including forming a tunnel insulating layer on a substrate, wherein forming the tunnel insulating layer includes forming a multi-element insulating layer by a process including sequentially supplying a first element source, a second element source, and a third element source to the substrate, forming a charge storage layer on the tunnel insulating layer, forming a blocking insulating layer on the charge storage layer, and forming a control gate electrode on the blocking insulating layer.