The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2016

Filed:

Jun. 09, 2014
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Tatsuo Morita, Kyoto, JP;

Manabu Yanagihara, Osaka, JP;

Hidetoshi Ishida, Osaka, JP;

Yasuhiro Uemoto, Toyama, JP;

Hiroaki Ueno, Osaka, JP;

Tsuyoshi Tanaka, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2005.12); H01L 29/778 (2005.12); H01L 27/06 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7787 (2012.12); H01L 27/0605 (2012.12);
Abstract

A semiconductor device includes a semiconductor layer stackformed on a substrateand having a channel region, a first electrodeA and a second electrodeB formed spaced apart from each other on the semiconductor layer stacka first gate electrodeA formed between the first electrodeA and the second electrodeB, and a second gate electrodeB formed between the first gate electrodeA and the second electrodeB. A first control layerA having a p-type conductivity is formed between the semiconductor layer stackand the first gate electrodeA.


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