The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2015
Filed:
Jun. 15, 2011
Sung Min Yoon, Suwon, KR;
Nam Yeal Lee, Icheon, KR;
Sang Ouk Ryu, Seoul, KR;
Seung Yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu Jeong Choi, Daejeon, KR;
Byoung Gon Yu, Yeongdong, KR;
Sung Min Yoon, Suwon, KR;
Nam Yeal Lee, Icheon, KR;
Sang Ouk Ryu, Seoul, KR;
Seung Yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu Jeong Choi, Daejeon, KR;
Byoung Gon Yu, Yeongdong, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.