The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2014

Filed:

Oct. 10, 2012
Applicant:

Estivation Properties Llc, Dover, DE (US);

Inventor:

Bishnu Prasanna Gogoi, Scottsdale, AZ (US);

Assignee:

Estivation Properties LLC, Dover, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2005.12); H01L 21/425 (2005.12); H01L 21/31 (2005.12); H01L 21/469 (2005.12); H01L 21/70 (2005.12);
U.S. Cl.
CPC ...
Abstract

In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to manufacture a semiconductor structure includes forming a cavity in a substrate. A portion of the substrate is doped, or a doped material is deposited over a portion of the substrate. At least a portion of the doped substrate or at least a portion of the doped material is converted to a dielectric material to enclose the cavity. The forming of the cavity may occur before or after the doping of the substrate or the depositing of the doped material. Other embodiments are described and claimed.


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