The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2013

Filed:

Jun. 30, 2010
Applicants:

Chang Auck Choi, Daejeon-shi, KR;

Myung Lae Lee, Daejeon, KR;

Chang Kyu Kim, Daejeon, KR;

Chi Hoon Jun, Daejeon, KR;

Youn Tae Kim, Daejeon, KR;

Inventors:

Chang Auck Choi, Daejeon-shi, KR;

Myung Lae Lee, Daejeon, KR;

Chang Kyu Kim, Daejeon, KR;

Chi Hoon Jun, Daejeon, KR;

Youn Tae Kim, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2005.12); B29D 11/00 (2005.12);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.


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