The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2013
Filed:
Jun. 06, 2010
Applicants:
Keiichi Yoshida, Tokyo, JP;
Shooji Kubono, Ome, JP;
Inventors:
Keiichi Yoshida, Tokyo, JP;
Shooji Kubono, Ome, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2005.12); G11C 16/04 (2005.12);
U.S. Cl.
CPC ...
Abstract
In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multi-valued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.
Yoshida, Keiichi. (2013). Nonvolatile semiconductor memory including multi-threshold voltage memory cells including voltage ranges indicating either an erase state or a two or more program state (U.S. Patent No. RE44350). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/RE44350
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile