The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2013
Filed:
Apr. 22, 2004
Tadashi Oshima, Kawasaki, JP;
Tadashi Oshima, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama-shi, JP;
Abstract
There are included steps of forming a silicon nitride layer on a silicon layer or a silicon oxide layer, loading the silicon layer or the silicon oxide layer and the silicon nitride layer in a dry etching atmosphere, and selectively etching the silicon nitride layer with respect to the silicon layer or the silicon oxide layer by flowing a fluorine gas consisting of any one of CHF, CHF, or CHFand an inert gas to the dry etching atmosphere. Hence, in the etching process of the silicon nitride layer, the etching selectivity of the silicon nitride layer to Si or SiOcan be enhanced and also etching anisotropy can be enhanced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile