The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2011
Filed:
Dec. 22, 2004
Takeshi Matsushita, Kanagawa, JP;
Hiroshi Tayanaka, Kanagawa, JP;
Takeshi Matsushita, Kanagawa, JP;
Hiroshi Tayanaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A porous Si layer is formed on a single-crystal Si substrate, and then a p-type Si layer, p-type Si layer and n-type Si layer which all make up a solar cell layer. After a protective film is made on the n-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.