The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2010

Filed:

May. 29, 2008
Applicants:

Tetsuya Kawashima, Hitachi, JP;

Akira Mishima, Mito, JP;

Inventors:

Tetsuya Kawashima, Hitachi, JP;

Akira Mishima, Mito, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2005.12); H01L 23/12 (2005.12);
U.S. Cl.
CPC ...
Abstract

In the semiconductor device, a control power MOSFET chipis disposed on the input-side plate-like leadand the drain terminal DTis formed on the rear surface of the chipand the source terminal STand gate terminal GTare formed on the principal surface of the chipand the source terminal STis connected to the plate-like lead for sourceFurthermore, a synchronous power MOSFET chipis disposed on the output-side plate-like leadand the drain terminal DTis formed on the rear surface of the chipand the output-side plate-like leadis connected to the drain terminal DTFurthermore, source terminal STand gate terminal GTare formed on the principal surface of the synchronous power MOSFET chipand the source terminal STis connected to the plate-like lead for sourceThe plate-like leads for sourceandare exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM


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