The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2010
Filed:
Jan. 01, 2003
Masahiko Kondow, Nishinomiya, JP;
Kazuhisa Uomi, Hachioji, JP;
Hitoshi Nakamura, Hachioji, JP;
Opnext Japan, Inc, , JP;
Abstract
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlGaInNPAsSb(0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of a nitrogen-containing alloy semiconductor AlGaInNPAsSb(0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10Torr or higher.