The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2009
Filed:
Feb. 18, 2003
Kazuya Nakayama, Sagamihara, JP;
Koichi Sugiyama, Yokohama, JP;
Kazuya Nakayama, Sagamihara, JP;
Koichi Sugiyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;
Abstract
A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg[F], a resistance in a channel length direction of that portion of the gate electrode, under which the channel is formed, is Rg [Ω], a threshold voltage, which is to be applied to the gate electrode and application of which permits flow of a drain current, is Vth [V], a voltage to be applied to the gate electrode to cut off the drain current is Voff [V], and a ratio of increase in the drain voltage per unit time at the time of cutting off the drain current is dV/dt [V/s], the following condition is satisfied:|Vth−Voff|≧0.5·Cg·Rg·(dV/dt)