The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2008
Filed:
Jun. 30, 2003
Akihiro Matsuda, Takatsuki, JP;
Yoshihisa Nagano, Jyoetsu, JP;
Yasuhiro Uemoto, Otsu, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention provides a semiconductor device including a semiconductor element and a dummy semiconductor element adjacent to the semiconductor element. When the semiconductor element is a capacitor element including a bottom electrode, a top electrode and a dielectric layer between the electrodes, a dummy capacitor element also has dummy electrodes and a dummy dielectric layer between the dummy electrodes. The dummy electrode is located so that a space between the top electrode of the capacitor element ad the dummy top electrode is in a predetermined range (e.g. 0.3 μm to 14 μm). The dummy capacitor element prevents the capacitor dielectric layer from degrading since the collisions of the etching ions with the capacitor dielectric layer in a dry etching process is suppressed.