The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2008

Filed:

Jun. 07, 2006
Applicant:

Hirokazu Hayashi, Tokyo, JP;

Inventor:

Hirokazu Hayashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2005.12);
U.S. Cl.
CPC ...
Abstract

An evaluation TEG for evaluating a semiconductor device including an SOI structure and a LOCOS having a birdbeak portion comprises two electrodesandhaving different electrode widths sufficiently large to disregard the length of the LOCOS birdbeak portion and an electrodehaving an extremely small width substantially equal to the length of the birdbeak portion. All the electrode have the same length and are connected to test padsa,a, anda, respectively. The capacitance of a parasitic transistor is easily extracted by using the evaluation TEG and the evaluation of parameters causing the hump characteristics is become possible.


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