The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2007
Filed:
Aug. 11, 2002
Kikuo Ono, Chiba-ken, JP;
Kazuhiro Ogawa, Chiba-ken, JP;
Takashi Suzuki, Chiba-ken, JP;
Kouichi Anno, Chiba-ken, JP;
Hiroki Sakuta, Chiba-ken, JP;
Makoto Tsumura, Ibaraki-ken, JP;
Masaaki Kitajima, Ibaraki-ken, JP;
Genshiro Kawachi, Chiba-ken, JP;
Kikuo Ono, Chiba-ken, JP;
Kazuhiro Ogawa, Chiba-ken, JP;
Takashi Suzuki, Chiba-ken, JP;
Kouichi Anno, Chiba-ken, JP;
Hiroki Sakuta, Chiba-ken, JP;
Makoto Tsumura, Ibaraki-ken, JP;
Masaaki Kitajima, Ibaraki-ken, JP;
Genshiro Kawachi, Chiba-ken, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A liquid crystal display device and a manufacturing method therefor are provided where the number of processes for manufacturing TFT substrates can be decreased and a high production yield can be attained. To attain these objects, an image signal bus-line includes at least a transparent conductive film and a semiconductor layer. A pattern of the transparent conductive film extends up to a thin film transistor to form its drain electrode, and a pattern of a semiconductor layer extends up to the transistor to form its source electrode. By virtue of these arrangements, the thin film transistor substrate can be manufactured using as little as three or four photolithography processes.