The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2005

Filed:

Jun. 01, 2003
Applicants:

Tomoko Matsudai, Tokyo, JP;

Tsutomu Kojima, Yokohama, JP;

Akio Nakagawa, Fujisawa, JP;

Inventors:

Tomoko Matsudai, Tokyo, JP;

Tsutomu Kojima, Yokohama, JP;

Akio Nakagawa, Fujisawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K005/22 ;
U.S. Cl.
CPC ...
Abstract

The differential amplifier of a comparator circuit includes first and second n-type MOSFETs for receiving an input signal, first and second p-type MOSFETs of a current mirror circuit, and a third n-type MOSFET of a current source circuit. The output stage includes a third p-type MOSFET for transmitting a signal, and a fourth n-type MOSFET of the current source circuit. The differential amplifier further includes fifth and sixth n-type MOSFETs respectively series-connected to the first and second n-type MOSFETs. The output stage further includes a seventh n-type MOSFET series-connected to the fourth n-type MOSFET. The gates of the fifth, sixth, and seventh n-type MOSFETs are connected to voltage bias circuits. The fifth, sixth, and seventh n-type MOSFETs suppress variations in voltage at an output node caused by poor saturation characteristics of the first, second, and fourth main n-type MOSFETs.


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