The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1994
Filed:
Jun. 15, 1992
Carl R Zeisse, San Diego, CA (US);
James R Zeidler, San Diego, CA (US);
Charles A Hewett, San Diego, CA (US);
Richard Nguyen, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A field effect transistor comprises a diamond substrate which has a p-type ion implanted region coterminous with a surface of the diamond substrate, wherein the ion implanted region has a hole concentration in the range of 1.times.10.sup.15 to 1.times.10.sup.17 holes/cm.sup.2, and a hole mobility equal to or greater than 1 cm.sup.2 /V-sec; spaced apart source and drain electrodes formed over the p-type ion implanted region on the surface of the diamond substrate; an electrically insulating material formed over the p-type ion implanted region on the surface of the diamond substrate between the source and drain electrodes; and a gate electrode formed on the surface of the insulating material.