The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Sep. 17, 1996
Applicant:
Inventors:
William K. Burns, Alexandria, VA (US);
Lew Goldberg, Fairfax, VA (US);
Wayne McElhanon, Bryans Rd., MD (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/10 ;
U.S. Cl.
CPC ...
H01S 3/10 ;
Abstract
A bulk, quasi-periodic phase-matched difference-frequency (DFG) process in field-poled LiNbO bulk crystal permits continuous tunability of the output radiation in the 3.0-4.1 &mgr;m wavelength range through grating rotation. DFG in QPM-LiNbO crystal, carried out using a Nd:YAG laser and a high power semiconductor laser at the quasi-phased matching (QPM) degeneracy point, results in an ultra wide 0.5 &mgr;m acceptance bandwidth, permitting crystal rotation-free wavelength tuning of 4.0-4.5 &mgr;m, with 0.2 mW output power at 4.5 &mgr;m.