The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1986
Filed:
Jul. 02, 1985
Applicant:
Inventor:
Arrigo Addamiano, Alexandria, VA (US);
Assignee:
The Government of the United States, Washington, DC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ; C09K / ;
U.S. Cl.
CPC ...
156612 ; 156662 ; 252 794 ;
Abstract
A method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrates having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H.sub.2 C.sub.3 H.sub.8 gas mixture; and depositing SiC on the buffer layer at high temperature using H.sub.2 +C.sub.3 H.sub.8 +SiH.sub.4 mixture.