The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jan. 13, 2016
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Korea Photonics Technology Institute, Gwangju, KR;
Inventors:
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
KOREA PHOTONICS TECHNOLOGY INSTITUTE, Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01); H01S 5/227 (2006.01); H01S 5/20 (2006.01); H01S 5/34 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/2081 (2013.01); H01S 5/2272 (2013.01); H01S 5/3202 (2013.01); H01S 5/3428 (2013.01); H01S 5/0425 (2013.01); H01S 2304/12 (2013.01);
Abstract
Provided are a semiconductor laser diode and a method for fabricating the same. The semiconductor laser diode includes a c-plane substrate, a group III nitride layer disposed on the c-plane substrate, and a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the group III nitride layer in the stated order, wherein each of the first semiconductor layer and the second semiconductor layer is exposed to the outside of the semiconductor laser diode.