The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

May. 18, 2016
Applicants:

Juhyun Kim, Hwaseong-si, KR;

Kiwoong Kim, Hwaseong-si, KR;

Sechung OH, Yongin-si, KR;

Woochang Lim, Seongnam-si, KR;

Inventors:

Juhyun Kim, Hwaseong-si, KR;

Kiwoong Kim, Hwaseong-si, KR;

Sechung Oh, Yongin-si, KR;

Woochang Lim, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 43/08 (2013.01);
Abstract

A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.


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