The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Mar. 14, 2017
Methods to utilize piezoelectric materials as gate dielectric in high frequency rbts in an ic device
Globalfoundries Inc., Grand Cayman, KY;
Zoran Krivokapic, Santa Clara, CA (US);
Bichoy Bahr, Cambridge, MA (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods to utilize piezoelectric materials as a gate dielectric in RBTs in an IC device to generate and sense higher frequency signals with high Qs and resulting devices are disclosed. Embodiments include forming, on an upper surface of a semiconductor layer, RBTs comprising even multiples of sensing RBTs and driving RBTs, each RBT including a piezoelectric gate dielectric layer, a gate, and a dielectric spacer on opposite sides of the piezoelectric gate dielectric layer and gate, wherein at least one pair of sensing RBTs is directly between two groups of driving RBTs; forming metal layers, separated by interlayer dielectric layers, above the RBTs; and forming vias through a dielectric layer above the RBTs connecting the RBTs to a metal layer.