The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Jan. 09, 2017
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Shih-I Chen, Hsinchu, TW;

Chia-Liang Hsu, Hsinchu, TW;

Tzu-Chieh Hsu, Hsinchu, TW;

Han-Min Wu, Hsinchu, TW;

Ye-Ming Hsu, Hsinchu, TW;

Chien-Fu Huang, Hsinchu, TW;

Chao-Hsing Chen, Hsinchu, TW;

Chiu-Lin Yao, Hsinchu, TW;

Hsin-Mao Liu, Hsinchu, TW;

Chien-Kai Chung, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/42 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/44 (2010.01); H01L 33/48 (2010.01); H01L 25/075 (2006.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 27/15 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); H01L 33/145 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/483 (2013.01); H01L 33/60 (2013.01); H01L 33/32 (2013.01); H01L 33/385 (2013.01); H01L 33/40 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.


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