The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jun. 07, 2016
Applicant:
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Inventors:
Zhibin Liu, Tianjin, CN;
Shasha Chen, Tianjin, CN;
Dongyan Zhang, Xiamen, CN;
Xiaofeng Liu, Tianjin, CN;
Duxiang Wang, Xiamen, CN;
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/32 (2013.01);
Abstract
A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.