The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Sep. 13, 2016
Applicant:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Inventor:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Assignee:
Solar-Tectic LLC, Briarcliff Manor, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0687 (2012.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/0336 (2006.01); H01L 31/06 (2012.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/028 (2013.01); H01L 31/02363 (2013.01); H01L 31/0336 (2013.01); H01L 31/06 (2013.01); H01L 31/0687 (2013.01); Y02E 10/50 (2013.01);
Abstract
A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous substrate, depositing a copper-inorganic film from a solid phase eutectic alloy on said buffer layer, and introducing Oto the copper on said inorganic film, forming a copper oxide thin film on said inorganic film.