The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Sep. 25, 2015
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
Michael C. Johnson, Alameda, CA (US);
Taiqing Qiu, Los Gatos, CA (US);
David D. Smith, Campbell, CA (US);
Peter John Cousins, Los Altos, CA (US);
Staffan Westerberg, Sunnyvale, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.