The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Aug. 04, 2015
Seiko Epson Corporation, Tokyo, JP;
Tomoyuki Furuhata, Suwa, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes: a body region of a second conductivity type formed in a semiconductor layer of a first conductivity type in a semiconductor substrate; a gate electrode facing the body region via a gate insulating film; a source region of the first conductivity type formed in the body region, on a first side of the gate electrode; a drain region of the first conductivity type formed in the semiconductor substrate such that a field oxide film is disposed between the drain region and a second side of the gate electrode; and an impurity diffusion region of the first conductivity type having, at least in a partial region thereof between the drain region and the body region, an impurity concentration distribution in which a concentration of impurities becomes higher in accordance with a depth from a main face of the semiconductor substrate.