The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Nov. 10, 2016
Hyundai Motor Company, Seoul, KR;
NackYong Joo, Hanam-si, KR;
Youngkyun Jung, Seoul, KR;
Junghee Park, Suwon-si, KR;
JongSeok Lee, Suwon-si, KR;
Dae Hwan Chun, Gwangmyeong-si, KR;
HYUNDAI MOTOR COMPANY, Seoul, KR;
Abstract
A semiconductor device includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench formed in the n− type layer and separated from each other; an n+ type region disposed between a side surface of the first trench and the side surface of the second trench and disposed on the n− type layer; a gate insulating layer disposed inside the first trench; a source insulating layer disposed inside the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer, the n+ type region, and the source insulating layer; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.