The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jan. 12, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Karoline Koepp, Munich, DE;
Herbert Gietler, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/0696 (2013.01); H01L 29/40 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/41741 (2013.01); H01L 29/7813 (2013.01);
Abstract
Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor body and electrically connected to a contact layer. The contact layer includes a plurality of layer sections separated from each other by a separation layer. A resistivity of the separation layer is at least 100 times the resistivity of the layer sections.