The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Feb. 10, 2014
Purdue Research Foundation, West Lafayette, IN (US);
James A. Cooper, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A semiconductor device includes a substrate, a drift region, a source region, a gate region, a drain contact and a base region. The substrate is doped with a first dopant type. The drift region is disposed above the substrate, and is doped with the first dopant type. The source region, doped with the first dopant type. The gate region is disposed above the drift region and above the source region. The base region is disposed between the source region and the drift region. At least a portion of the base region includes at least one trench having a vertical wall and a horizontal wall. The base region is further configured to conduct current in a horizontal direction on the vertical wall and in a horizontal direction the horizontal wall.