The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Nov. 12, 2015
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Yongmin Kim, Gyeonggi-do, KR;

Jeongoh Kim, Gyeonggi-do, KR;

Jungsun Beak, Gyeonggi-do, KR;

Kyoungjin Nam, Gyeonggi-do, KR;

Jeonggi Yun, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3265 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 51/5206 (2013.01); H01L 51/5253 (2013.01); H01L 51/56 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 27/322 (2013.01); H01L 27/3272 (2013.01); H01L 2227/323 (2013.01);
Abstract

An organic light-emitting diode display includes a substrate in which an emission area and a non-emission area are defined; a thin film transistor disposed in the non-emission area on the substrate; passivation layer disposed on the thin film transistor; a first storage capacitor electrode and a second storage capacitor electrode superposed thereon, having the passivation layer interposed therebetween, in the emission area; an overcoat layer disposed on the second storage capacitor electrode; and an anode disposed on the overcoat layer, coming into contact with one side of the second storage capacitor electrode through an overcoat layer contact hole penetrating the overcoat layer and, coming into contact with part of the thin film transistor through a passivation layer contact hole disposed in the overcoat layer contact hole and penetrating the passivation layer.


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