The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Mar. 20, 2017
Applicant:
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Inventor:
Hiroshi Shibata, Miyagi, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/146 (2006.01); G02B 1/113 (2015.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); G02B 1/113 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01);
Abstract
A semiconductor device including a light receiving portion provided in a semiconductor layer of a first conductor type, the light receiving portion being of a second conductor type that is different from the first conductor type; a buffer layer provided at a light incidence side of the light receiving portion, the buffer layer being of the first conductor type; and a low refractive index layer provided at a light incidence side of the buffer layer, the low refractive index layer having a lower refractive index than refractive indices of the semiconductor layer and the buffer layer.