The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Feb. 20, 2015
Applicant:
Stmicroelectronics SA, Montrouge, FR;
Inventor:
Bruno Rauber, Goncelin, FR;
Assignee:
STMICROELECTRONICS SA, Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/101 (2006.01); H01L 31/11 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1446 (2013.01); H01L 31/101 (2013.01); H01L 31/11 (2013.01);
Abstract
A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.