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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9997548 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

May. 11, 2017

Method of fabricating semiconductor display apparatus

Applicant:

Himax Technologies Limited, Tainan, TW;

Inventors:

Yu-Jui Hsieh, Tainan, TW;

Po-Nan Chen, Tainan, TW;

Assignee:

HIMAX TECHNOLOGIES LIMITED, Tainan, TW;

Attorney:

CKC & Partners Co., Ltd.

Primary Examiner:

Laura Menz

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); G03F 7/16 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/09 (2006.01); G03F 7/26 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); G03F 7/0007 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/2022 (2013.01); G03F 7/26 (2013.01);
Abstract

A method of fabricating an image sensor includes the following steps. A semiconductor substrate is provided. A first photoresist structure is formed on the semiconductor substrate. A second photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure. A third photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure and the second photoresist structure. A first etching back process is performed to remove a first portion of the third photoresist structure above a top surface of the second photoresist structure. A second etching back process is performed to remove a portion of the second photoresist structure above a top surface of the first photoresist structure and to remove a second portion of the third photoresist structure above the top surface of the first photoresist structure.

Find Patent Forward Citations

Hsieh, Yu-Jui. (2018). Method of fabricating semiconductor display apparatus (U.S. Patent No. 9997548). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9997548

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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