The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jan. 04, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jae-Hwang Sim, Hwaseong-si, KR;
Hojun Seong, Suwon-si, KR;
Bongtae Park, Seoul, KR;
Woo-Jung Kim, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/11529 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11529 (2013.01); H01L 27/11573 (2013.01);
Abstract
A semiconductor device may include a first conductive pattern having a line portion and a pad portion connected to the line portion on a substrate, a gate insulating pattern and a second conductive pattern sequentially stacked on the substrate, and a capping layer disposed on the first and second conductive patterns. A first trench is defined in an upper portion of the substrate adjacent to one side of the second conductive pattern, and the capping layer at least partially fills the first trench.